| 发明名称 |
SEMICONDUCTOR DEVICE HAVING METAL GATE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A semiconductor device having metal gate includes a substrate, a metal gate positioned on the substrate, a high-k gate dielectric layer, and an epitaxial channel layer positioned in between the high-k gate dielectric layer and the substrate. A length of the epitaxial channel layer is larger than a length of the metal gate, and a bottom of the epitaxial channel layer and the substrate are coplanar. |
| 申请公布号 |
US2015372105(A1) |
申请公布日期 |
2015.12.24 |
| 申请号 |
US201514838371 |
申请日期 |
2015.08.28 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Hou Yong Tian |
| 分类号 |
H01L29/49;H01L29/78;H01L29/16;H01L29/20;H01L29/51;H01L29/423 |
主分类号 |
H01L29/49 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A semiconductor device having metal gate, comprising:
a substrate; a metal gate positioned on the substrate; a high-k gate dielectric layer; and an epitaxial channel layer positioned in between the high-k gate dielectric layer and the substrate, a length of the epitaxial channel layer being larger than a length of the metal gate, and a bottom of the epitaxial channel layer and the substrate being coplanar. |
| 地址 |
Hsin-Chu City TW |
