Semiconductor Device

摘要

A semiconductor device includes a substrate having a first conductivity type, a first heavily-doped region formed in the substrate and having the first conductivity type, a second heavily-doped region formed in the substrate and having the first conductivity type, and an embedded layer formed in the substrate and separated from the first and second heavily-doped regions. The embedded layer has a second conductivity type different from the first conductivity type. A portion of the embedded layer is beneath the first heavily-doped region. A third heavily-doped region is formed in the substrate, between the first and second heavily-doped regions, and contacting the embedded layer, and has the second conductivity type.

主权项

1. A semiconductor device, comprising:
a substrate having a first conductivity type; a first heavily-doped region formed in the substrate and having the first conductivity type; a second heavily-doped region formed in the substrate and having the first conductivity type; an embedded layer formed in the substrate and separated from the second heavily-doped regions region, the embedded layer having a second conductivity type different from the first conductivity type, a portion of the embedded layer being beneath the first heavily-doped region; a third heavily-doped region formed in the substrate, between the first and second heavily-doped regions, and contacting the embedded layer, the third heavily-doped region having the second conductivity type; and an insulating isolation layer formed on one side of the first, second, and third heavily-doped regions, wherein the embedded layer extends beneath the insulating isolation layer.