| 发明名称 |
PHOTORESIST COMPOSITION |
| 摘要 |
A photoresist composition, comprising: from 0.1 to 1.0 parts of a polyether-modified organosilicon levelling agent 58; from 7 to 23 parts of a polyfunctional monomer; from 13 to 29 parts of a alkaline soluble resin; from 23 to 62.8 parts of a pigment dispersion; from 1.5 to 11.9 parts of a photo-initiator; and from 10 to 45 parts of a solvent, on the basis of parts by weight. The photoresist composition can solve the problem of poor levelling property of the coating film and shrinkage of the film surface after high temperature baking occurring in the existing photoresist composition. |
| 申请公布号 |
US2015370165(A1) |
申请公布日期 |
2015.12.24 |
| 申请号 |
US201414441056 |
申请日期 |
2014.10.24 |
| 申请人 |
BOE TECHNOLOGY GROUP CO., LTD. |
发明人 |
Wang Xuelan |
| 分类号 |
G03F7/038;G03F7/004 |
主分类号 |
G03F7/038 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A photoresist composition, comprising: from 0.1 to 1.0 parts of a polyether-modified organosilicon levelling agent 58; from 7 to 23 parts of a polyfunctional monomer; from 13 to 29 parts of a alkaline soluble resin; from 23 to 62.8 parts of a pigment dispersion; from 1.5 to 11.9 parts of a photo-initiator; and from 10 to 45 parts of a solvent, on the basis of parts by weight. |
| 地址 |
Beijing CN |
