发明名称 METHOD FOR PROCESSING A SUBSTRATE AND PROCESSING ARRANGEMENT FOR PROCESSING A SUBSTRATE
摘要 In various embodiments, a method for processing a substrate is provided. The method includes placing the substrate on at least one substrate carrier. The substrate carrier includes at least one carrier layer and a thermal insulating layer arranged over the carrier layer. The thermal insulating layer is arranged between the carrier layer and the substrate placed on. The thermal insulating layer includes at least one of a lower density or a lower thermal conductivity than the carrier layer. The method further includes coating the substrate with a coating material while the substrate is lying on the at least one substrate carrier, and removing coating material that adheres to the substrate carrier during the coating of the substrate from the at least one substrate carrier, the removal of the coating material from the at least one substrate carrier taking place by irradiating the at least one substrate carrier.
申请公布号 US2015368793(A1) 申请公布日期 2015.12.24
申请号 US201514745540 申请日期 2015.06.22
申请人 VON ARDENNE GmbH 发明人 von der Waydbrink Hubertus;Wanke Roland;Dubau Christoph;Stange Daniel;Hentschel Michael
分类号 C23C16/44;C23C14/50;C23C16/458 主分类号 C23C16/44
代理机构 代理人
主权项 1. A method for processing a substrate, the method comprising: placing the substrate on at least one substrate carrier, the substrate carrier comprising at least one carrier layer and a thermal insulating layer arranged over the carrier layer, the thermal insulating layer being arranged between the carrier layer and the substrate placed on, the thermal insulating layer comprising at least one of a lower density or a lower thermal conductivity than the carrier layer; coating the substrate with a coating material while the substrate is lying on the at least one substrate carrier; and removing coating material that adheres to the substrate carrier during the coating of the substrate from the at least one substrate carrier, the removal of the coating material from the at least one substrate carrier taking place by irradiating the at least one substrate carrier.
地址 Dresden DE