| 摘要 |
PROBLEM TO BE SOLVED: To provide an optical semiconductor device manufacturing method and an optical semiconductor device, which can inhibit sulfurization of a silver-plated layer.SOLUTION: A manufacturing method of an optical semiconductor device including a substrate where a silver-plated layer is formed on a surface and a light emitting diode bonded to the silver-plated layer comprises: a film formation process of forming a laminated silicate compound film with a film thickness of not exceeding 35 μm and a second silicate compound film other than the laminated silicate compound film; and a connection process of electrically connecting the light emitting diode and the silver-plated layer by wire bonding after the film formation process. |
