| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A semiconductor device includes a gate structure located on a substrate; and a raised source/drain region adjacent to the gate structure. An interface is between the gate structure and the substrate. The raised source/drain region includes a stressor layer providing strain to a channel under the gate structure; and a silicide layer in the stressor layer. The silicide layer extends from a top surface of the raised source/drain region and ends below the interface by a predetermined depth. The predetermined depth allows the stressor layer to maintain the strain of the channel. |
| 申请公布号 |
US2015372142(A1) |
申请公布日期 |
2015.12.24 |
| 申请号 |
US201414311921 |
申请日期 |
2014.06.23 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
发明人 |
KUANG Shin-Jiun;WANG Yi-Han;YU Tsung-Hsing;SHEU Yi-Ming |
| 分类号 |
H01L29/78;H01L29/66 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a gate structure located on a substrate, and an interface between the gate structure and the substrate; a raised source/drain region adjacent to the gate structure, wherein the raised source/drain region comprises:
a stressor layer providing strain to a channel region under the gate structure; anda silicide layer in the stressor layer, wherein the silicide layer extends from a top surface of the raised source/drain region and ends below the interface by a predetermined depth, and the predetermined depth allows the stressor layer to maintain the strain of the channel region. |
| 地址 |
Hsinchu TW |
