发明名称 ENHANCING THE EMISSIVITY OF A DONOR SUBSTRATE FOR ION IMPLANTATION
摘要 The disclosed embodiments relate to techniques for enhancing the emissivity of a donor substrate for ion implantation. According to embodiments of the present disclosure, a donor substrate of crystalline material is provided having a front surface and a back surface, wherein an ion beam directed toward the front surface of the donor substrate is configured to implant ions into the donor substrate. An emissivity coating is applied to the back surface of the donor substrate that enhances an emissivity of the donor substrate. Further, according to embodiments of the present disclosure, a donor substrate of crystalline material is provided having a front surface and a back surface, and an emissivity coating is applied onto the back surface that enhances an emissivity of the donor substrate. An ion beam is generated and directed toward the front surface of the donor substrate, and an ion dosage is implanted into the donor substrate.
申请公布号 WO2015195314(A1) 申请公布日期 2015.12.23
申请号 WO2015US33650 申请日期 2015.06.02
申请人 GTAT CORPORATION 发明人 GILLESPIE, JOSEPH;VENGURLEKAR, ANIRUDDHA, A.
分类号 H01J37/317 主分类号 H01J37/317
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