Embodiments described herein generally relate to apparatus for forming silicon epitaxial layers on semiconductor devices. Deposition gases and etching gases may be provided sequentially or simultaneously to improve epitaxial layer deposition characteristics. A gas distribution assembly may be coupled to a deposition gas source and an etching gas source. Deposition gas and etching gas may remain separated until the gases are provided to a processing volume in a processing chamber. Outlets of the gas distribution assembly may be configured to provide the deposition gas and etching gas into the processing volume with varying characteristics. In one embodiment, outlets of the gas distribution assembly which deliver etching gas to the processing volume may be angled upward relative to a surface of a substrate.
申请公布号
WO2015195271(A1)
申请公布日期
2015.12.23
申请号
WO2015US31910
申请日期
2015.05.21
申请人
APPLIED MATERIALS, INC.
发明人
LI, XUEBIN;BAUTISTA, KEVIN JOSEPH;SHERVEGAR, AVINASH;KIM, YIHWAN;MYO, NYI O.;DUBE, ABHISHEK