EXPOSURE METHOD USING E-BEAM, AND METHOD FOR FABRICATING MASK AND SEMICONDUCTOR DEVICE USING THE EXPOSURE METHOD

摘要

The present invention provides an exposure method using e-beam, which can optimize a total exposure process by minimizing a time required for mask data preparation (MDP), and can improve the quality of a pattern through an inverse solution concept on the basis of a multi-beam mask exposure device, and a method for fabricating a mask and a semiconductor device using the same. The exposure method includes the steps of: receiving mask tape out (MTO) design data obtained through optical proximity correction (OPC); preparing mask data including job-deck as to the MTO design data without data format conversion; performing complex correction including mask process correction by an exposure process, and e-beam proximity effect correction (PEC) on the mask data; generating pixel data on the basis of the data processed with the complex correction; and performing e-beam writing on a substrate for a mask on the basis of the pixel data.