发明名称 |
Non-volatile memory cell with metal capacitor |
摘要 |
<p>According to one exemplary embodiment, a memory cell in a semiconductor chip includes a non-volatile memory transistor, a control gate, and a floating gate. The control gate is capacitively coupled to the floating gate of the non-volatile memory transistor by a metal capacitor. The metal capacitor can be formed in one or more metal levels and in one embodiment is in a shape of a comb with multiple fingers. In one embodiment, the non-volatile memory transistor is an NMOS non-volatile memory transistor.</p> |
申请公布号 |
EP1895594(B1) |
申请公布日期 |
2015.12.23 |
申请号 |
EP20070010405 |
申请日期 |
2007.05.24 |
申请人 |
BROADCOM CORPORATION |
发明人 |
CHEN, ANDREW;SAHOO, BIBHUDATTA;ANVAR, ALI |
分类号 |
H01L29/66;G11C16/04;H01L21/28;H01L21/336;H01L27/115;H01L29/423;H01L29/788 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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