Composition for removing photoresist and/or etching residue from a substrate and use thereof

摘要

Compositions containing certain organic solvents comprising at least 50% by weight of a glycol ether and a quaternary ammonium compound are capable of removing residues such as photoresist and/or etching residue from an article.

主权项

1. A method for removing photoresist or etching residue or both from the substrate wherein said method comprises contacting a substrate with a composition consisting essentially of:
a) at least about 50% by weight of organic solvent consisting essentially of glycol ether and at least one of C2-C20 alkane diols or C3-C20 alkane triols, wherein at least about 50% of the organic solvent is said glycol ether, and wherein said glycol ether is selected from polyethylene glycol monomethyl ether, propylene glycol monopropyl ether, dipropylene glycol monomethyl ether, tripropylene glycol monomethyl ether, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monopropyl ether, diethylene glycol monoisopropyl ether, diethylene glycol monobutyl ether, diethylene glycol monoisobutyl ether, diethylene glycol monobenzyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, triethylene glycol monomethyl ether, triethylene glycol dimethyl ether, diethylene glycol methyl ethyl ether, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, propylene glycol monomethyl ether, propylene glycol dimethyl ether, propylene glycol monobutyl ether, dipropylene glycol monopropyl ether, dipropylene glycol monoisopropyl ether, dipropylene monobutyl ether, dipropylene glycol diisopropyl ether, 1-methoxy-2-butanol, 2-methoxy-1-butanol, 2-methoxy-2-methylbutanol, 1,1-dimethoxyethane, and 2-(2-butoxyethoxy) ethanol; b) at least about 0.5% by weight of one or more quaternary ammonium hydroxides wherein said one or more quaternary ammonium hydroxides is selected from tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, trimethylethylammonium hydroxide, (2-hydroxyethyl)trimethylammonium hydroxide, (2-hydroxyethyl)triethylammonium hydroxide, (2-hydroxyethyl)tripropylammonium hydroxide, and (1-hydroxypropyl)trimethylammonium hydroxide; c) 0.2 to 19% by weight of corrosion inhibitor selected from the group consisting of gallic acid, lactic acid, and citric acid and salts thereof, catechol, benzotriazole (BZT), resorcinol, phenols, triazoles, hydroxylamines or acid salts thereof, or mixtures thereof; and d) optionally water.