Methods, articles and devices for pulse adjustments to program a memory cell

摘要

Embodiments disclosed herein may relate to adjusting an aspect of a programming pulse for one or more memory cells, such as based at least in part on one or more detected programmed resistance values for the one or more memory cells.

主权项

1. A method, comprising:
applying one or more programming electrical pulses to one or more memory cells; detecting one or more resistance values related to the one or more memory cells; and adjusting one or more aspects of one or more subsequent programming electrical pulses based at least in part on the one or more detected resistance values, wherein the adjusting the one or more aspects of the one or more subsequent programming electrical pulses comprises adjusting a fall time of the one or more subsequent programming electrical pulses.