| 摘要 |
The present invention relates to a semiconductor light emitting device, which includes a plate including a power terminal and a radiation part insulted from the power terminal; and a semiconductor light emitting chip embedded in the plate. The semiconductor light emitting chip includes: multiple semiconductor layers including a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity, different from the first conductivity, and an active layer interposed between the first and second semiconductor layers, and generating light through recombination between an electron and a hole; a first electrode electrically connected to the first semiconductor layer and supplying the electron or hole; a second electrode part electrically connected to the second semiconductor layer and supplying the electron or hole; and a radiation pad formed on the semiconductor layers by staying away from the first and second electrode parts. At least one among the first and second electrode parts is electrically connected to the power terminal, and the radiation pad is fixed to the radiation part. |
