发明名称 |
Flowable carbon film by FCVD hardware using remote plasma PECVD |
摘要 |
Embodiments of the present invention generally relate to methods for forming a flowable carbon-containing film on a substrate. In one embodiment, an oxygen-containing gas is flowed into a remote plasma region to produce oxygen-containing plasma effluents, and a carbon-containing gas is combined with the oxygen-containing plasma effluents in a substrate processing region which contains the substrate. A carbon-containing film is formed in trenches which are formed on the substrate and a low K dielectric material is deposited on the carbon-containing film in the trenches. The carbon-containing film is decomposed by an UV treatment and airgaps are formed in the trenches under the low K dielectric material. |
申请公布号 |
US9219006(B2) |
申请公布日期 |
2015.12.22 |
申请号 |
US201414153807 |
申请日期 |
2014.01.13 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
Chatterjee Amit |
分类号 |
H01L21/316;H01L21/764;H01L21/768 |
主分类号 |
H01L21/316 |
代理机构 |
Patterson & Sheridan, LLP |
代理人 |
Patterson & Sheridan, LLP |
主权项 |
1. A method for forming airgaps in trenches formed on a substrate, comprising:
forming a flowable carbon-containing film in a first portion of the trenches, comprising:
providing a carbon-containing gas to a substrate processing region in a chemical vapor deposition chamber;providing an oxygen-containing gas to a remote plasma system to form oxygen-containing plasma effluents;introducing the plasma effluents into the substrate processing region; andreacting the plasma effluents and the carbon-containing gas to form the flowable carbon-containing film in the first portion of the trenches; forming a low K dielectric material on the flowable carbon-containing film in a second portion of the trenches; and removing the flowable carbon-containing film to form the airgaps in the first portion of the trenches. |
地址 |
Santa Clara CA US |