发明名称 Flowable carbon film by FCVD hardware using remote plasma PECVD
摘要 Embodiments of the present invention generally relate to methods for forming a flowable carbon-containing film on a substrate. In one embodiment, an oxygen-containing gas is flowed into a remote plasma region to produce oxygen-containing plasma effluents, and a carbon-containing gas is combined with the oxygen-containing plasma effluents in a substrate processing region which contains the substrate. A carbon-containing film is formed in trenches which are formed on the substrate and a low K dielectric material is deposited on the carbon-containing film in the trenches. The carbon-containing film is decomposed by an UV treatment and airgaps are formed in the trenches under the low K dielectric material.
申请公布号 US9219006(B2) 申请公布日期 2015.12.22
申请号 US201414153807 申请日期 2014.01.13
申请人 APPLIED MATERIALS, INC. 发明人 Chatterjee Amit
分类号 H01L21/316;H01L21/764;H01L21/768 主分类号 H01L21/316
代理机构 Patterson & Sheridan, LLP 代理人 Patterson & Sheridan, LLP
主权项 1. A method for forming airgaps in trenches formed on a substrate, comprising: forming a flowable carbon-containing film in a first portion of the trenches, comprising: providing a carbon-containing gas to a substrate processing region in a chemical vapor deposition chamber;providing an oxygen-containing gas to a remote plasma system to form oxygen-containing plasma effluents;introducing the plasma effluents into the substrate processing region; andreacting the plasma effluents and the carbon-containing gas to form the flowable carbon-containing film in the first portion of the trenches; forming a low K dielectric material on the flowable carbon-containing film in a second portion of the trenches; and removing the flowable carbon-containing film to form the airgaps in the first portion of the trenches.
地址 Santa Clara CA US
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