Nitride semiconductor structure and method of preparing the same

摘要

A nitride semiconductor structure of the present invention is obtained by growing an h- or t-BN thin film (12) and a wurtzite-structure AlxGa1-xN (x>0) thin film (14) as buffer layers and forming a single-crystal wurtzite-structure AlGaInBN thin film (13) thereon. While GaN, AlGaN, AlN, and the like have the wurtzite structure with sp3 bonds, h-BN or t-BN has the graphite structure with sp2 bonds, and has a completely different crystal structure. Accordingly, it has heretofore not been considered that a wurtzite-structure AlGaInBN thin film can be grown on a graphite-structure h-BN thin film. However, when a wurtzite-structure AlxGa1-xN (x>0) thin film (14) is formed as a buffer layer on a graphite-structure boron nitride thin film (12), a wurtzite-structure AlGaInBN (13) nitride semiconductor structure such as GaN can be grown on the buffer layer.

主权项

1. A nitride semiconductor structure comprising:
a graphite-structure boron nitride thin film; a wurtzite-structure AlxGa1-xN (x>0) thin film on the graphite-structure boron nitride thin film; and a wurtzite-structure AlGaInBN thin film on the wurtzite-structure AlxGa1-xN (x>0) thin film.