Ion implantation at high temperature surface equilibrium conditions

摘要

There are disclosed herein various implementations of a method and system for ion implantation at high temperature surface equilibrium conditions. The method may include situating a III-Nitride semiconductor body in a surface equilibrium chamber, establishing a gas pressure greater than or approximately equal to a surface equilibrium pressure of the III-Nitride semiconductor body, and heating the III-Nitride semiconductor body to an elevated implantation temperature in the surface equilibrium chamber while substantially maintaining the gas pressure. The method also includes implanting the III-Nitride semiconductor body in the surface equilibrium at the elevated implantation temperature chamber while substantially maintaining the gas pressure, the implanting being performed using an ion implanter interfacing with the surface equilibrium chamber.

主权项

1. A method comprising:
situating a III-Nitride semiconductor body in a surface equilibrium chamber; establishing a gas pressure greater than or approximately equal to a surface equilibrium pressure of said III-Nitride semiconductor body using a nitrogen containing gas, said gas pressure being greater than or approximately equal to 1 mTorr; heating said III-Nitride semiconductor body to an elevated implantation temperature in said surface equilibrium chamber while substantially maintaining said gas pressure; implanting said III-Nitride semiconductor body in said surface equilibrium chamber at said elevated implantation temperature while substantially maintaining said gas pressure; wherein said implanting is performed using an ion implanter interfacing with said surface equilibrium chamber.