| 发明名称 |
NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT |
| 摘要 |
Provided is a nitride semiconductor light emitting element in which deep-level light emission is suppressed, monochromaticity is improved, and light is emitted in a high-efficiency manner. A nitride semiconductor light emitting element having a light-emitting layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, wherein the n-type nitride semiconductor layer contains A1nGa1-nN (0<n≤1), and has a C concentration of 1×1017/cm3 or less. |
| 申请公布号 |
WO2015190000(A1) |
申请公布日期 |
2015.12.17 |
| 申请号 |
WO2014JP65792 |
申请日期 |
2014.06.13 |
| 申请人 |
USHIO DENKI KABUSHIKI KAISHA |
发明人 |
TSUKIHARA, MASASHI;MIYOSHI, KOHEI;SUGIYAMA, TORU |
| 分类号 |
H01L33/32 |
主分类号 |
H01L33/32 |
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