GETTERING AGENTS IN MEMORY CHARGE STORAGE STRUCTURES

摘要

Methods of forming memory cells including a charge storage structure having a gettering agent therein can be useful for non-volatile memory devices. Providing for gettering of oxygen from a charge-storage material of the charge storage structure can facilitate a mitigation of detrimental oxidation of the charge-storage material.

主权项

1. A memory cell, comprising:
a first dielectric adjacent a semiconductor; a control gate; a second dielectric between the control gate and the first dielectric; and a charge storage structure between the first dielectric and the second dielectric; wherein the charge storage structure comprises a charge-storage material and a gettering agent; and wherein at least a portion of the charge storage structure comprises a ratio of the gettering agent to the charge-storage material that is greater than a stoichiometric amount.