| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which improves an integration degree of an element per unit area while suppressing an increase in chip size.SOLUTION: A semiconductor device comprises: a semiconductor circuit layer 101 in which a memory controller 202 and a processing circuit 201 including a first transistor are formed; an insulation film formed on the processing circuit and the memory controller; a semiconductor circuit layer 103 formed on the insulation film, in which a memory cell array circuit 204 including a second transistor is formed; a memory peripheral circuit 203 electrically connected with the memory controller 202 via connection wiring 205 formed in a contact hole formed in the insulation film; and two-terminal element layer 105 provided on the semiconductor circuit layer 103. The two-terminal element layer includes a two-terminal element 206 such as a magnetoresistive element which is electrically connected with a transistor 208 provided in the memory cell array circuit 204 by connection wiring 207 and the like. |
