SOI WAFER MANUFACTURING METHOD AND BONDED SOI WAFER

摘要

PROBLEM TO BE SOLVED: To provide an SOI wafer manufacturing method which can accumulate a polycrystalline silicon layer or an amorphous silicon layer so as not to progress single crystallization even though undergoing a heat treatment process of an SOI wafer manufacturing process and a device manufacturing process.SOLUTION: An SOI wafer manufacturing method comprises: a process of forming a polycrystalline silicon layer or an amorphous silicon layer on a bonding surface side of a base wafer; a process of forming an insulation film on one of or both of a surface of the polycrystalline silicon layer or the amorphous silicon layer, and a bonding surface of a bond wafer; a process of bonding the base wafer and the bond wafer via the insulation film; and a process of thinning the bond wafer to form an SOI layer. A wafer having resistivity of 100 &OHgr; cm or more is used as the base wafer and the SOI wafer manufacturing method has a process of forming a thermal nitride film on the bonding surface side of the base wafer before the process of forming the polycrystalline silicon layer or the amorphous silicon layer on the bonding surface side of the base wafer.