发明名称 |
Carbon Layer and Method of Manufacture |
摘要 |
A system and method for manufacturing a carbon layer is provided. An embodiment comprises depositing a first metal layer on a substrate, the substrate comprising carbon. A silicide is eptiaxially grown on the substrate, the epitaxially growing the silicide also forming a layer of carbon over the silicide. In an embodiment the carbon layer is graphene, and may be transferred to a semiconductor substrate for further processing to form a channel within the graphene. |
申请公布号 |
US2015364329(A1) |
申请公布日期 |
2015.12.17 |
申请号 |
US201514834081 |
申请日期 |
2015.08.24 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Dal Mark van |
分类号 |
H01L21/285;H01L29/40;H01L29/423;H01L21/324;H01L21/02;H01L29/16 |
主分类号 |
H01L21/285 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method comprising:
depositing a metal on a (111) substrate, the (111) substrate comprising a carbon-containing material; reacting the metal with the carbon-containing material by performing a first anneal on the metal and the (111) substrate to form a metal-containing compound layer and a graphene layer on the metal-containing compound layer distal from the (111) substrate; transferring the graphene layer to a device substrate; forming a gate electrode proximate the graphene layer on the device substrate; and forming a first contact and a second contact to the graphene layer on the device substrate, the first contact and the second contact being on opposite sides of the gate electrode. |
地址 |
Hsin-Chu TW |