| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element which has its breakdown voltage characteristics improved to suppress an impact ionization phenomenon, and a method of fabricating the same. SOLUTION: A semiconductor device comprises a gate electrode 50 formed on a semiconductor substrate 10, drift regions 20 at opposite sides of the gate electrode 50, a source region 30 and a drain region 40 formed in the respective drift regions 20, and STI 60 regions formed in the respective drift regions 20 between the gate electrode 50 and drain region 40, wherein the drift regions 20 are formed by implanting first and second conductivity-type impurity ions. COPYRIGHT: (C)2009,JPO&INPIT
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