| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of securing a stable breakdown voltage without generating a difference between potential distributions in both directions even in a drift layer having a stripe type SJ structure. SOLUTION: The semiconductor device has an element region 100 where a semiconductor element is formed and a terminal region 200 enclosing the element region 100. The semiconductor device includes: p-type pillars 1 formed in an n-type drift layer 4 in stripes having lengths along a Y axis parallel to a plane of the n-type drift layer 4 and periodically along an X axis orthogonal to the Y axis; and a plurality of field plate electrodes 2 formed concentrically and annularly enclosing the element region 100 in the terminal region 200. The p-type pillar layer 1 has a Y-axial end beyond the boundary between the element region 100 and terminal region 200. The field plate electrodes 200 are formed to pass near both Y-axial ends of the p-type pillar layer 1. COPYRIGHT: (C)2009,JPO&INPIT
|
