| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein microfabrication and integration are possible, manufacturing process is simple and the symmetry of output voltage characteristic is excellent, and to provide a manufacturing method therefor. SOLUTION: The semiconductor device is provided with a first transistor 10 that includes a first gate electrode 11, a first gate insulating film 12, a first semiconductor film 13, a first source electrode 14, and a first drain electrode 15; and a second transistor 20 that includes a second gate electrode 21, a second gate insulating film 22, a second semiconductor film 23, a second source electrode 24, and a second drain electrode 25. The first semiconductor film 13 contains a p-type organic semiconductor material, and the second semiconductor film 23 contains an n-type organic semiconductor material. The first and second gate electrodes 11 and 21 are electrically connected with each other, and the first and second drain electrodes 15 and 25 are electrically connected with each other. The film thickness T1 of the first gate insulating film 12 is larger than that T2 of the second gate insulating film 22. COPYRIGHT: (C)2009,JPO&INPIT
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