发明名称 Verfahren zur Herstellung von bleibenden Polymerisat-Bildern
摘要 1,165,020. Forming resist images. GAF CORP. Dec.8, 1966 [March 14, 1966], No.55086/66. Heading G2H. A process for the preparation of a positive polymer resist image comprises exposing imagewise a photo-conductor layer, the said photoconductor layer being disposed in electrically conducting contact with an ethylenically unsaturated monomer layer coated on an electrically conductive support, the said monomer layer comprising (a) an addition polymerizable ethylenicallyunsaturated monomer which is solid or liquid at ambient temperature containing the grouping CH2 = C# activated by direct attachment to an electro-negative group chosen from >C = O, - C # N, - C # C -, - O -, - CH = CH2 and a pyrrolidone residue and (b) a reducing agent comprising a metal salt in which the metal cation is capable of oxidation to a higher valency state when contacted with a peroxy compound containing the grouping -O-O-, and when the metal salt is present in a layer of the monomer it is capable of being electrolyzed to form a product which inhibits the polymerization of the vinyl monomer in the presence of the peroxy compound, the said oxidation being accompanied by the evolution of free radicals capable of initiating the polymerization of the said monomer and maintaining an electrical potential difference across the said photo-conductor layer and the said conductive support throughout the exposure interval, the said potential difference across the two layers being not so high that the current leakage across the monomer layer in the absence of illumination has reached the threshold value for metal salt electrolysis to take place and the said potential difference being substantially uniformly distributed over each of the said photoconductor layer and the said conductive support contacting the said monomer layer with a solution comprising the said peroxy compound and thereafter removing the unpolymerized portions of the said monomer layer in the exposed areas to yield a positive polymer resist. Cross-linking agents e.g. N1N<1> - methylene bisacrylamide, triacrylylformal, triallylcyanurate, divinyl compounds and diglycol diacrylate maybe present in the monomer layer. Specified metal salts are derived from V, Cr, Ni, Mo, Fe, Co or Cu.
申请公布号 DE1522640(A1) 申请公布日期 1969.11.27
申请号 DE19661522640 申请日期 1966.12.14
申请人 GENERAL ANILINE & FILM CORP. 发明人 SIMON DEUTSCH,ALBERT
分类号 C08F4/28;G03G17/00;G03G17/02 主分类号 C08F4/28
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