发明名称 |
Device with MOSFET on SOI |
摘要 |
The device (1) has an upper region (102) including a MOSFET type semiconductor device i.e. P-channel MOS transistor (106), with a metallic gate (108) and arranged on a semiconductor layer (118). A lower region (104) has a MOSFET type semiconductor device i.e. N-channel MOS transistor (134), arranged on a portion (132b) of another semiconductor layer, where the layers are made of strained silicon. The transistor (134) has a gate (128b) formed by a portion of a metallic layer. The latter semiconductor layer is arranged on an insulating layer (146) stacked on another metallic layer (148). An independent claim is also included for a method of manufacturing a silicon-on-insulator MOSFET device. |
申请公布号 |
EP1947686(A3) |
申请公布日期 |
2010.02.24 |
申请号 |
EP20080100640 |
申请日期 |
2008.01.18 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
CORONEL, PHILIPPE;FENOUILLET-BERANGER, CLAIRE |
分类号 |
H01L21/336;H01L21/84;H01L27/12 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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