发明名称 |
Radiation source, lithographic apparatus and device manufacturing method |
摘要 |
<p>A lithographic apparatus includes a radiation source configured to produce extreme ultraviolet radiation. The radiation source includes a chamber in which a plasma is generated, and a mirror configured to reflect radiation emitted by the plasma. The mirror includes a multi-layer structure that includes alternating Mo/Si layers. A boundary Mo layer or a boundary Si layer or a boundary diffusion barrier layer of the alternating layers forms a top layer of the mirror, the top layer facing inwardly with respect to the chamber. A hydrogen radical generator is configured to generate hydrogen radicals in the chamber. The hydrogen radicals are configured to remove debris generated by the plasma from the mirror.</p> |
申请公布号 |
EP2157584(A2) |
申请公布日期 |
2010.02.24 |
申请号 |
EP20090166629 |
申请日期 |
2009.07.28 |
申请人 |
ASML NETHERLANDS B.V. |
发明人 |
VAN HERPEN, MAARTEN;BANINE, VADIM;KLUNDER, DERK;SOER, WOUTER |
分类号 |
G21K1/06 |
主分类号 |
G21K1/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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