发明名称 Radiation source, lithographic apparatus and device manufacturing method
摘要 <p>A lithographic apparatus includes a radiation source configured to produce extreme ultraviolet radiation. The radiation source includes a chamber in which a plasma is generated, and a mirror configured to reflect radiation emitted by the plasma. The mirror includes a multi-layer structure that includes alternating Mo/Si layers. A boundary Mo layer or a boundary Si layer or a boundary diffusion barrier layer of the alternating layers forms a top layer of the mirror, the top layer facing inwardly with respect to the chamber. A hydrogen radical generator is configured to generate hydrogen radicals in the chamber. The hydrogen radicals are configured to remove debris generated by the plasma from the mirror.</p>
申请公布号 EP2157584(A2) 申请公布日期 2010.02.24
申请号 EP20090166629 申请日期 2009.07.28
申请人 ASML NETHERLANDS B.V. 发明人 VAN HERPEN, MAARTEN;BANINE, VADIM;KLUNDER, DERK;SOER, WOUTER
分类号 G21K1/06 主分类号 G21K1/06
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