MANUFACTURING DEVICE FOR CRYSTAL INGOT

摘要

PURPOSE: A manufacturing device for a crystal ingot is provided to maximize single crystal growth speed by increasing radiation heat transfer and reducing the restored heat from the single crystal ingot. CONSTITUTION: A furnace(20) is installed inside a chamber(10) and contains a silicon solution. A heater(40) heats furnace. An insulating member(45) surrounds the heater and prevents the heat diffusion from the heater to the chamber. A heat shield(100) is installed between ingot and furnace to surround a single crystalline ingot and shields the heat from the silicon solution and ingot. A second shield member is a thermal shield connected to the insulating member as a flange. A first shield member(200) is extended from a closest part to a single crystalline ingot of the second shield.