| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent variation in the dose amount of effective implantation depending on places when impurity ion implantations are performed. Ž<P>SOLUTION: The method for manufacturing a semiconductor device includes a step in which impurity ion is implanted into a predetermined region (112) of a semiconductor layer (108) with a resist film 152 as a mask. If a mask data rate, which represents percentage of an opening part against the entire reticle region used when forming the opening part at the resist film for implanting impurity ion into the predetermined region, is less than a first reference value, a dummy ion implantation region 142 is provided in the region other than the region of predetermined range, so that the mask data rate of a reticle becomes larger than a second reference value which is larger than the first reference value. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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