| 发明名称 |
Method of manufacturing a MOSFET |
| 摘要 |
<p>A transistor (30) and method for forming a transistor using an edge blocking material (24) is disclosed herein. The edge blocking material (24) may be located adjacent a gate (22) or disposable gate or may be part of a disposable gate. During an angled pocket implant, the edge blocking material (24) blocks some dopant from entering the semiconductor body (10) and the dopant (18) placed under the edge blocking material is located at a given distance below the surface of the semiconductor body (10). <IMAGE></p> |
| 申请公布号 |
EP0923119(B1) |
申请公布日期 |
2010.01.27 |
| 申请号 |
EP19980309963 |
申请日期 |
1998.12.04 |
| 申请人 |
TEXAS INSTRUMENTS INC. |
发明人 |
RODDER, MARK S.;NANDAKUMAR, MAHALINGAM |
| 分类号 |
H01L21/336;H01L29/78;H01L21/265;H01L21/8238;H01L27/092;H01L29/08;H01L29/10;H01L29/47;H01L29/49 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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