PHASE CHANGE TYPE MEMORY AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A phase change memory device and a manufacturing method thereof are provided to reduce the power consumption of the phase change memory device by arranging an auxiliary area made of different phase change material around a main operating area made of a phase change material. CONSTITUTION: A first electrode layer(110) is formed on the top of a substrate. A heat emitting electrode layer(120) is formed on the first electrode layer. An insulating layer(130) is formed on the heat emitting electrode layer, and has a pore(150) exposing a part of the heat emitting electrode layer. A phase change material layer(200) is formed to fill in the pore and contact a part of the heat emitting electrode layer. A second electrode layer is formed on the top of the phase change material layer.