METHOD OF FORMING A FERROELECTRIC LAYER AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME

摘要

PURPOSE: A method for forming a ferroelectric thin film and a semiconductor device manufacturing method using the same are provided to flatten only rough portion of the ferroelectric thin film while suppressing the abrasion of bulk portion of the ferroelectric thin film by using slurry composition. CONSTITUTION: A conductive structure is formed on a substrate(S110). A pre ferroelectric film is formed on the conductive structure(S120). The surface of the pre ferroelectric film is chemically-mechanically polished using slurry composition(S130). A ferroelectric film with improved surface roughness is washed(S140). The ferroelectric film is heat-treated to cure the damage of the film surface(S150).