| 摘要 |
PURPOSE: A method for manufacturing a semiconductor memory device is provided to secure the operating reliability of the memory device by minimizing the leakage current of the bit line. CONSTITUTION: A trench forms an element isolation film(26). The photoresist pattern is formed on the semiconductor substrate(20). The trench is formed by the photoresist pattern as the etching mask. The photoresist pattern is removed. The annealing process is processed in order to reduce the leakage current of the active area. The gap fill process is processed in the trench.
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