发明名称 |
Method for forming quantum well structure and method for manufacturing semiconductor light emitting element |
摘要 |
<p>A method for forming a quantum well structure that can reduce the variation in the In composition in the thickness direction of a well layer and a method for manufacturing a semiconductor light emitting element are provided. In a step of forming a quantum well structure (active layer) by alternately growing barrier layers and well layers on a primary surface of a GaN substrate, the well layers are each formed by growing InGaN, the barrier layers are each grown at a first temperature, the well layers are each grown at a second temperature which is lower than that of the first temperature, and when the well layers are each formed, before a starting material gas for Ga (trimethylgallium) is supplied, a starting material gas for In is supplied.</p> |
申请公布号 |
EP2124266(A1) |
申请公布日期 |
2009.11.25 |
申请号 |
EP20090005065 |
申请日期 |
2009.04.06 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
ENYA, YOHEI;YOSHIZUMI, YUSUKE;UENO, MASAKI;NAKANISHI, FUMITAKE |
分类号 |
B82Y10/00;B82Y20/00;B82Y40/00;H01L21/205;H01L33/04;H01L33/06;H01L33/32;H01S5/343 |
主分类号 |
B82Y10/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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