发明名称 |
Method of manufacturing substrate for forming device, and method of manufacturing nitride-based semiconductor laser diode |
摘要 |
Provided is a method of manufacturing a semiconductor laser diode. The method includes the steps of: preparing a GaN substrate having an a-plane or m-plane GaN layer formed thereon; forming a plurality of laser diode structures on the GaN layer; etching the GaN substrate such that a cutting reference line is formed in a groove shape along the crystal surface of the a-plane or m-plane, not a main plane; and cutting the GaN substrate along the cutting reference line so as to form a mirror surface of the semiconductor laser diode, the mirror surface coinciding with the crystal surface of the a-plane or m-plane, not the main plane.
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申请公布号 |
US2009155945(A1) |
申请公布日期 |
2009.06.18 |
申请号 |
US20080073293 |
申请日期 |
2008.03.04 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD |
发明人 |
SUNG YOUN JOON;PAEK HO SUN |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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