NONVOLATILE PROGRAMMABLE SWITCH AND METHOD FOR MANUFACTURING THE SAME
摘要
<p>A programmable switch device and a method for manufacturing the same are provided to reduce a size of a switch device by forming the switch device of a simple structure comprised of two electrodes and a nano wire. A substrate(100) has a silicon oxide film by thermally oxidizing the surface of a silicon substrate or the silicon semiconductor substrate. A first electrode layer(110) is formed on the substrate. The first electrode layer is comprised of two first patterns(111) with a square shape and a second pattern(112) with a line shape connected to the first pattern. The first electrode layer is divided into two parts of both sides of a groove formed on the surface of the substrate. A second electrode layer(120) serving as the terminal of the switch device is formed in the upper part of the first electrode layer. A chalcogenide nano wire(130) is formed between the cross sections of the second pattern of the first electrode layer.</p>
申请公布号
KR20090063059(A)
申请公布日期
2009.06.17
申请号
KR20080047400
申请日期
2008.05.22
申请人
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
发明人
YOON, SUNG MIN;JUNG, SOON WON;YU, BYOUNG GON;LEE, SEUNG YUN;PARK, YOUNG SAM