发明名称 POWER SOURCE VOLTAGE DROP VERIFYING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a power source voltage drop verifying method of a semiconductor integrated circuit device, and the semiconductor integrated circuit device, wherein a voltage drop in actual device operation is visually and easily verified with simple constitution. SOLUTION: A current is supplied to an inverter chain 3 formed in a semiconductor integrated circuit device to acquire a light emission intensity distribution thereof, which in turn is compared with a power supply network analysis result of the semiconductor integrated circuit device to specify a power source voltage drop place. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009088092(A) 申请公布日期 2009.04.23
申请号 JP20070253567 申请日期 2007.09.28
申请人 FUJITSU MICROELECTRONICS LTD 发明人 OSUGI HIDEMITSU
分类号 H01L21/822;H01L27/04 主分类号 H01L21/822
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