| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a vertical SGT structure capable of dealing with various service voltages without requiring a special process, structure, or step, and to provide a method of manufacturing the semiconductor device. SOLUTION: The semiconductor device includes a high breakdown voltage transistor and a low breakdown voltage transistor that are arranged together on the same substrate. The low breakdown voltage transistor is formed of a single unit transistor 50 having a semiconductor base pillar 5 erected on the substrate 1, a gate electrode 11 formed on the outer peripheral surface of the base pillar 5, and a source diffusion layer 16 and a drain diffusion layer 9 formed on and under the pillar 5. The high breakdown voltage transistor is formed by connecting source diffusion layers 16 to drain diffusion layers 9 in series in a plurality of unit transistors 50 having semiconductor base pillars 5 as high as the base pillar 5 of the unit transistor 50 making up the low breakdown voltage transistor and electrically connecting gate electrodes 11 of the unit transistors 50. COPYRIGHT: (C)2009,JPO&INPIT |
