| 摘要 |
PROBLEM TO BE SOLVED: To provide polishing solution containing solid abrasive grains and being used for chemical mechanical polishing in a process for planarizing a semiconductor integrated circuit having a barrier layer while suppressing occurrence of dishing and erosion, and to provide a polishing method. SOLUTION: The polishing solution being used for chemical mechanical polishing in a process for planarizing a semiconductor integrated circuit having a barrier layer contains (A) colloidal silica particles, (B) hydrophilic benzotriazol derivative, (C) hydrophobic benzotriazol derivative, and (D) an oxidant. The (B) hydrophilic benzotriazol derivative preferably has a hydroxyl group, an amino group, a carboxyl group, or a hydroxymethyl group, and the (C) hydrophobic benzotriazol derivative preferably has an unsubstituted alkyl group, an alkoxy group of≥10C, an alkoxy carbonyl group of≥15C, a carbonyl amid group of≥15C, or an amino carbonyl amid group of≥15C. COPYRIGHT: (C)2009,JPO&INPIT |
