| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of growing a compound semiconductor that can reduce mixing of Al when an aluminum compound semiconductor layer and a nitride semiconductor layer are both formed. SOLUTION: In a raw material supply device 51 for MBE, an N radical gun 53 is held by a raw material chamber 55, which provides a space for plasma generation for the N radical gun 53. The raw material chamber 55 is connected to an exhaustion system 59 through a gate valve 61. The raw material chamber 55 is connected to a chamber 13c for growth through a gate valve 57, and the raw material supply device 51 can supply a nitrogen raw material to the chamber 13c through the gate valve 57. The gate valve 65 is opened and closed independently of the operation of raw material sources other than for nitrogen. In a method for growing a chemical semiconductor, the gate valve 57 is opened in a period wherein a nitrogen radical beam is provided, and is closed in a period wherein the nitrogen radical beam is not provided. COPYRIGHT: (C)2009,JPO&INPIT
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