发明名称 ADJUSTING METHOD OF DILUTED AQUA REGIA, AND MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a method for simply and efficiently removing a residual thin film containing at least one of Pt and Pd especially in the manufacturing step of a semiconductor apparatus. SOLUTION: The diluted aqua regia with a predetermined concentration is adjusted by pouring hydrochloric acid, nitric acid and water in order in a predetermined vessel or pouring nitric acid, hydrochloric acid and water in order in a predetermined vessel. Then, the semiconductor apparatus during the manufacturing process is immersed in the diluted aqua regia and the residual thin film containing Pt of the semiconductor apparatus is removed. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009056347(A) 申请公布日期 2009.03.19
申请号 JP20070223457 申请日期 2007.08.30
申请人 TOSHIBA CORP 发明人 YAMADA KOREI;INUKAI MINAKO;ONODA HAJIME
分类号 B01F3/08;C23F1/30;H01L21/28;H01L21/306;H01L21/308;H01L21/336;H01L29/78 主分类号 B01F3/08
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