METHOD OF PROGRAMMING NONVOLATILE MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of programming a nonvolatile memory device.

SOLUTION: The method of programming the nonvolatile memory device includes: (A) a first programming step to apply a program voltage to a memory cell, and next, to verify the memory cell using a first verification voltage; (B) a step to apply a perturbation pulse for promoting stabilization of electric charges to the memory cell passed through the verification using the first verification voltage; and (C) a step to verify the memory cell using a second verification voltage higher than the first verification voltage after the perturbation pulse is applied.

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