| 摘要 |
PROBLEM TO BE SOLVED: To provide an edge-emitting semiconductor laser which can be improved in performance while having its output enhanced. SOLUTION: The edge-emitting semiconductor laser 1 has a semiconductor layer 3 having an optical waveguide 3a extending in a Y direction, a current block layer 4 disposed on the semiconductor layer 3 and having an opening portion 4a, and a p-side electrode 5 disposed on the semiconductor layer 3 and current block layer 4, where the p-side electrode 5 is disposed on one side and the other side of the opening portion 4a of the current block layer 4 in an X direction on the semiconductor layer 3, and also formed so that the X-directional center portion of the semiconductor layer 3 at the opening portion 4a of the current block layer 4 is exposed. COPYRIGHT: (C)2009,JPO&INPIT
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