发明名称 NOVEL MANUFACTURING DESIGN AND PROCESSING METHODS AND APPARATUS FOR SPUTTERING TARGETS
摘要 Sputtering targets having a reduced burn-in time are disclosed that comprise: a) a heat-modified surface material having a substantially uniform crystallographic orientation, wherein at least part of the surface material was melted during heat-treatment, and b) a core material having an average grain size. Sputtering targets are also disclosed that include a heat-modified surface material having network of shallow trenches, alternating rounded peaks and valleys in the surface of the target or a combination thereof, wherein at least part of the surface material was melted during heat-treatment, and a core material having an average grain size. Methods of producing sputtering targets having reduced burn-in times comprises: a) providing a sputtering target comprising a sputtering surface having a sputter material and a crystal lattice, and b) heat-modifying the sputtering surface in order to melt at least part of the surface material and modify the crystal lattice. Methods of producing a sputtering target having a reduced burn-in time are also disclosed comprising: providing a sputtering target having a sputtering surface, wherein the sputtering surface comprises a damage layer, and modifying the sputtering surface by deplating a layer of material, pulsed-plating a layer of material or a combination thereof.
申请公布号 WO2008134516(A3) 申请公布日期 2009.03.19
申请号 WO2008US61583 申请日期 2008.04.25
申请人 HONEYWELL INTERNATIONAL INC.;KARDOKUS, JANINE;PINTER, MICHAEL;PAYTON, MICHAEL;WU, STEVEN (CHI TSE);AKINS, JARED;HORT, WERNER 发明人 KARDOKUS, JANINE;PINTER, MICHAEL;PAYTON, MICHAEL;WU, STEVEN (CHI TSE);AKINS, JARED;HORT, WERNER
分类号 C23C14/34 主分类号 C23C14/34
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