| 摘要 |
PROBLEM TO BE SOLVED: To obtain a compound semiconductor element such as an LED which is superior in characteristics such as light emitting intensity, by constituting a laminated structure constituted of a group III nitride semiconductor crystal layer in which crystal system is regulated in hexagonal system on a cubic system substrate, such as Si single crystal. SOLUTION: This compound semiconductor element is constituted of a laminated structuring member 20, in which a low temperature buffer layer 102 composed of boron phosphide based material whose subject is noncrystalline, a buffer layer composed of boron phosphide based crystal for which the ratio of boron phosphide polymer (BαPβ: 6<=α<=13, β=1 or β=2) is set at least 95.0 wt.% and at most 99.8 wt.%, and the ratio of boron phosphide monomer (composition formula: BP) is set at least 0.2 wt.% and at most 5.0 wt.%, and a group III nitride semiconductor crystal layer, whose main structure is hexagonal, is formed on an Si single crystal substrate 101. |
