SPUTTERING APPARATUS

摘要

Provided is a sputtering apparatus which substantially uniformly supplies a reaction gas to the entire surface of a substrate, makes film qualities, such as film thickness distribution and specific resistance value, substantially uniform over the entire surface of the substrate and has a simple constitution. The sputtering apparatus is provided with a plurality of targets (41) arranged in parallel at prescribed intervals in a sputter chamber (11a), a sputter power supply (E) for supplying each target with power, and a gas introducing means (8) for introducing a sputter gas and the reaction gas into the sputter chamber. The gas introducing means for introducing the reaction gas has at lest one gas supply tube (84). The gas supply tube is arranged on the rear side of targets arranged in parallel, by being separated from the targets, and is provided with a jetting port (84a) for jetting the reaction gas. The sputtering apparatus has an adjusting means (9) for adjusting the flow quantity of the reaction gas which flows through gaps between the targets.