发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which an exclusive pin for performing switching of a mode can be unnecessitated, and the number of pins can be decreased. SOLUTION: The semiconductor memory device is provided with a memory cell array 10 provided with a plurality of memory cells MC, a burst circuit 31 generating a mode control signal BST, and a control circuit 19 provided with a refresh command detecting circuit 33 sharing a signal line 34 in which the mode control signal is transmitted with the burst circuit, the refresh command detecting circuit 33 performs refresh operation for the memory cell array when the mode control signal is at a first level. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009048691(A) 申请公布日期 2009.03.05
申请号 JP20070212842 申请日期 2007.08.17
申请人 TOSHIBA MICROELECTRONICS CORP;TOSHIBA CORP 发明人 KUDO MASAO;ISHIGURO SHIGEFUMI
分类号 G11C11/401;G11C11/403 主分类号 G11C11/401
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