| 摘要 |
In a MOS transistor, a structure of trenches or fins arranged in parallel to a gate length direction is formed in a stepwise manner along a gate width direction to thereby reduce a step height of each step. Even if the MOS transistor includes a deep trench or a high fin in order to increase driving performance per unit area, a uniform impurity concentration in a channel region, a source diffusion layer, and a drain diffusion layer can be made by an ion implantation method. Accordingly, there can be obtained a stable characteristic that variation in the characteristic due to a surface on which the channel is formed does not appear, and a lateral MOS transistor with high driving performance having a reduced on-resistance per unit area can be provided.
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