发明名称 Method of Fabricating an Integrated Circuit
摘要 A method of fabricating an integrated circuit includes providing a semiconductor substrate having a doped area; generating a conductive structure towards the doped area, wherein the conductive structure includes an extending section that protrudes from the doped area; generating an electrically isolating layer at a sidewall of the extending section after generating the conductive structure.
申请公布号 US2009057810(A1) 申请公布日期 2009.03.05
申请号 US20070850440 申请日期 2007.09.05
申请人 VERDUGO VICTOR;WU DONGPING;FITZ CLEMENS 发明人 VERDUGO VICTOR;WU DONGPING;FITZ CLEMENS
分类号 H01L21/8242;H01L29/02 主分类号 H01L21/8242
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