发明名称 |
Method of Fabricating an Integrated Circuit |
摘要 |
A method of fabricating an integrated circuit includes providing a semiconductor substrate having a doped area; generating a conductive structure towards the doped area, wherein the conductive structure includes an extending section that protrudes from the doped area; generating an electrically isolating layer at a sidewall of the extending section after generating the conductive structure.
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申请公布号 |
US2009057810(A1) |
申请公布日期 |
2009.03.05 |
申请号 |
US20070850440 |
申请日期 |
2007.09.05 |
申请人 |
VERDUGO VICTOR;WU DONGPING;FITZ CLEMENS |
发明人 |
VERDUGO VICTOR;WU DONGPING;FITZ CLEMENS |
分类号 |
H01L21/8242;H01L29/02 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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