发明名称 |
ORGANIC THIN FILM TRANSISTOR AND ORGANIC THIN FILM LIGHT-EMITTING TRANSISTOR |
摘要 |
<p>Disclosed is an organic thin film transistor having excellent stability in the atmosphere and high operating speed. Specifically disclosed is an organic thin film transistor wherein three terminals, namely a gate electrode, a source electrode and a drain electrode, an insulating layer for insulation between the gate electrode and the source electrode/the drain electrode, and an organic semiconductor layer are formed on a substrate and the source-drain current is controlled by a voltage applied to the gate electrode. This organic thin film transistor is characterized in that it further comprises a crystallinity control layer which is composed of a film made from a crystalline compound for controlling the crystallinity of the organic semiconductor layer, and the organic semiconductor layer containing a compound having a heterocyclic group or a compound having a quinone structure is formed on the crystallinity control layer. Also specifically disclosed is an organic thin film light-emitting transistor which is characterized by being composed of the above-described organic thin film transistor wherein one of the source electrode and the drain electrode is composed of a hole injecting electrode and the other is composed of an electron injecting electrode.</p> |
申请公布号 |
WO2009028660(A1) |
申请公布日期 |
2009.03.05 |
申请号 |
WO2008JP65525 |
申请日期 |
2008.08.29 |
申请人 |
IDEMITSU KOSAN CO., LTD.;TANAKA, ICHIRO;OSUGA, HIDEJI |
发明人 |
TANAKA, ICHIRO;OSUGA, HIDEJI |
分类号 |
H01L29/786;H01L51/05;H01L51/30;H01L51/40;H01L51/50 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|